Name: Review of the present technology of the radiation source for Extreme Ultraviolet Lithography
Start: 2010-10-14T09:15:00+02:00
End: 2010-10-14T10:00:00+02:00
Location: No location set

Description

Optical lithography is the most dynamic research field in nano-technology, especially driven by strong demands from semiconductor industry for “Moore´s law”. Global research effort has recently resulted in an establishment of the source architecture for 400W level, 13.5nm incoherent radiation. It is reviewed in this talk on the high average power, short pulse CO2 laser, magnetic field control of fast particles, and EUV optics, to supply clean, high average power EUV light. Road maps of two major suppliers are also evaluated. It is recently discussed on a compact, high brightness source for metrology application, and the next wavelength as 6.7nm where a relatively high reflectivity optics is available. ERL FEL technology has a clear advantage in a large scale facility at shorter wavelength. EUV source technology in 2020 is discussed by evaluating laser plasma and FEL characteristics. Reference: “Lithography gets extreme”, C.Wagner and N.Harned, p24 Technology Focus, Nature Photonics, Jan. 2010

Review of the present technology of the radiation source for Extreme Ultraviolet Lithography

by Prof. Dr. Akira Endo (Dresden and Tokyo)

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