Fsec laser solid interactions on nanoscale semiconducting objects and their impact on imaging with 3D-atomic resolution in the Atomprobe
by
Nicolas Innocenti(KTH)
→
Europe/Stockholm
122:026
122:026
Description
Laser-assisted Atom Probe Tomography has shown a great potential as a metrology technique for the semiconductor industry as it provides a three-dimensional compositional analysis with near-atomic resolution. In this technique, a needle-shaped sample is ionized atom by atom under the combined effects of a high constant voltage and a laser pulse. The laser-tip interaction is crucial in this method as it determines the evaporation probabilities, mass resolution and surface migration. We briefly describe state-of-the-art Atomprobe technology, give an overview of its applications and limitations and present a model of the interaction of a silicon tip with a laser pulse based on classical electromagnetism and one-dimensional carrier and heat diffusion phenomena. As we show, this approximate model predicts many previously unexplained observations.
