Speaker
Description
The development of technology in materials science, for instance, semiconductors technology, nowadays requires a deep understanding of the characteristics of materials with unprecedented temporal and spatial resolution. A possible experimental approach for gaining this knowledge is near-edge X-ray absorption fine structure (NEXAFS).
My Ph.D. project aims to further the research on the ultrafast photophysics of semiconductors on the few-femtosecond and even attosecond time scale by transient absorption and reflectivity spectroscopy in the XUV.
For this, the current Optical Parametric Amplifier (OPA) source available at CNR-IFN in the near IR will be optimized for the generation of isolated attosecond X-ray pulses by high-order harmonic generation in a chip obtained by femtosecond laser micromachining. Several stabilization feedback loops, such as beam pointing stabilization and long-term carrier-envelope phase stabilization will be implemented on the OPA source, which is crucial not only for generating the desired pulses, but also to increase the signal-to-noise ratio of the ongoing experiment.
A setup for transient absorption and reflectivity in the water window will be implemented and tested on different kinds of semiconductors.