Speaker
Luiz Oliveira
Description
The last decade saw remarkable advances in (i) the
fabrication of such elementary nanostructured devices as the
single-electron transistor and (ii) the measurement of their
transport properties. Parallel theoretical progress having
offered clearer understanding of the universal functions
describing such properties in the Kondo regime, insight can
be gained from detailed quantitative comparisons between
laboratory data and theoretical analyses. The talk will
compare the experimental results of Grobis et al. [1], who
systematically studied the temperature and gate-voltage
dependences of the conductance of a single-electron
transistor, with theoretical predictions based on the
spin-degenerate Anderson model. It will be shown that a
universal curve exactly derived under the assumption that
the dot magnetic moment is partially screened at high
temperatures fits all the data within the experimental
accuracy. The physical implications of this assumption,
which suggests that the dot moments couples anistropically
to the neighboring electron gases, will be discussed.
[1] M. Grobis, I. G. Rau, R. M. Potok, H. Shtrikman, and D. Goldhaber-Gordon, Phys. Rev. Lett. 100, 246601 (2008).
[1] M. Grobis, I. G. Rau, R. M. Potok, H. Shtrikman, and D. Goldhaber-Gordon, Phys. Rev. Lett. 100, 246601 (2008).
