Speaker
Description
Surface-electrode ion traps are a promising platform for scalable
quantum computers. In the Quantum CCD architecture, transport
of ions between registers allows to limit the number of ions that has
to be kept in a single potential well at any given time and to im-
plement specialized registers for storage, cooling, detection and gate
operations. Here we present the design of a demonstrator chip based
on an X-junction and quantum gate operations with chip-integrated
microwave conductors. This design has been developed with the
goal of increasing the storage capacity, optimizing laser access and
improving gate operations. Furthermore, we show results of high-frequency simulations to optimize the microwave gate zone of this design, which essential for high fideltity gate operations.
| Academic level | PhD student |
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