Speakers
Description
Fabrication of advanced ion traps with inner-segmented electrodes and integrated microwave antennas
M. Aylett, M. Siegele, S. Yadav, M. Saleh, W.K Hensinger
A key requirement for scalable trapped-ion quantum computing architectures, such as that proposed by Lekitsch et al. [1], is the development of ion traps incorporating inner DC electrodes. These electrodes enable higher secular frequencies, reduced motional heating during ion transport, and support faster and more complex transport operations. Additionally, large magnetic field gradients are necessary for implementations based on global radiation fields, allowing for individual ion addressing. The integration of on-chip microwave delivery further enhances performance by enabling significantly higher microwave power at the ion compared to external delivery methods, resulting in increased Rabi frequencies and faster gate operations.
The incorporation of inner DC electrodes introduces substantial fabrication challenges. In particular, vertical interconnects and dedicated routing layers are required to deliver DC signals from bonding pads at the chip periphery through thick dielectric layers to the inner electrodes. While complex, this approach distinguishes the devices presented here from the majority of conventional surface ion traps. This next-generation trap design represents a significant increase in structural complexity compared to the current generation used at IQT, but offers considerable improvements in predicted performance.
[1] Bjoern Lekitsch et al. “Blueprint for a microwave trapped ion quantum computer”. In: Science Advances 3.2 (Feb. 2017). issn: 2375-2548. doi: 10.1126/sciadv.1601540. url: http://dx.doi.org/10.1126/sciadv.1601540.
| Academic level | PhD student |
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